Continuum process modeling of point defect and impurity aggregation during silicon crystal growth and wafer annealing ha......

对在重掺杂抛光单晶硅衬度用ＲＴＣＶＤ法形成硅薄膜太阳电池进行了研究。衬底为〈１００〉晶向Ｐ＾＋＋型重掺硅片，电阻率为５×１０＾－３Ωｃｍ。主要工艺过程为：在衬底......